BUK9609-75A,118 NXP Semiconductors, BUK9609-75A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK9609-75A,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9609-75A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8840pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056283118; BUK9609-75A /T3; BUK9609-75A /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9609-75A_3
Product data sheet
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Z th(j-mb)
0.001
(K/W)
0.01
0.1
1
10 -6
0.2
0.1
0.02
0.05
δ = 0.05
Single Shot
Conditions
see
minimum footprint; mounted on a
printed-circuit board
10 -5
Figure 4
Rev. 03 — 22 September 2008
10 -4
10 -3
10 -2
N-channel TrenchMOS logic level FET
P
Min
-
-
10 -1
BUK9609-75A
t p
T
t p (s)
δ
Typ
-
50
03nb45
=
t p
T
t
© NXP B.V. 2008. All rights reserved.
1
Max
0.65
-
Unit
K/W
K/W
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