BUK9609-75A,118 NXP Semiconductors, BUK9609-75A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK9609-75A,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9609-75A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8840pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056283118; BUK9609-75A /T3; BUK9609-75A /T3

NXP Semiconductors
BUK9609-75A_3
Product data sheet
Fig 5. Sub-threshold drain current as a function
Fig 7. Output characteristics: drain current as a
(A)
10
I
10
10
10
10
10
D
I D
-1
-2
-3
-4
-5
-6
(A)
of gate-source voltage
function of drain-source voltage; typical
values
0
400
350
300
250
200
150
100
50
0
0
7
8
2
1
10
min
6
5
4
V GS (V) =
typ
2
6
max
4
V
GS
03aa36
(V)
8
V DS (V)
Rev. 03 — 22 September 2008
03nb41
2.2
3
3
10
Fig 6. Gate-source threshold voltage as a
Fig 8. Drain-source on-state resistance as a
V
GS(th)
(V)
2.5
1.5
0.5
(mΩ)
R DSon
2
1
0
-60
function of junction temperature
function of gate-source voltage; typical
values
20
18
16
14
12
10
8
6
4
2
N-channel TrenchMOS logic level FET
0
3
4
BUK9609-75A
60
max
typ
min
5
120
© NXP B.V. 2008. All rights reserved.
6
T
03aa33
j
( ° C)
7
V GS (V)
180
03nb40
8
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