BUK9609-75A,118 NXP Semiconductors, BUK9609-75A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9609-75A,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9609-75A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8840pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056283118; BUK9609-75A /T3; BUK9609-75A /T3

NXP Semiconductors
BUK9609-75A_3
Product data sheet
Fig 13. Reverse diode current as a function of
Fig 15. Normalized drain-source on-state resistance factor as a function of junction temperature
120
I S
100
(A)
reverse diode voltage; typical values
80
60
40
20
0
0.0
0.2
0.4
T j = 175
0.6
O
C
a
2.4
1.6
0.8
0
−60
T j = 25
0.8
V SD (V)
03nb36
Rev. 03 — 22 September 2008
O
C
1.0
0
60
Fig 14. Input, output and reverse transfer
C (pF)
120
16000
14000
12000
10000
8000
6000
4000
2000
capacitances as a function of drain-source
voltage; typical values
T
0
0.01
j
(°C)
03nb25
N-channel TrenchMOS logic level FET
180
0.1
BUK9609-75A
1
© NXP B.V. 2008. All rights reserved.
10
V DS (V)
03nb43
100
Ciss
Coss
Crss
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