BUK9609-75A,118 NXP Semiconductors, BUK9609-75A,118 Datasheet - Page 7

MOSFET N-CH 75V 75A D2PAK

BUK9609-75A,118

Manufacturer Part Number
BUK9609-75A,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9609-75A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
8840pF @ 25V
Power - Max
230W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0085 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
75 A
Power Dissipation
230000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056283118
BUK9609-75A /T3
BUK9609-75A /T3
NXP Semiconductors
BUK9609-75A_3
Product data sheet
Fig 9. Forward transconductance as a function of
Fig 11. Gate-source voltage as a function of gate
g fs
V GS
(V)
(S)
drain current; typical values
charge; typical values
140
120
100
4.5
3.5
2.5
1.5
0.5
80
60
40
20
0
5
4
3
2
1
0
0
0
20
50
V DD = 14 V
40
60
100
V DD = 60 V
Q G (nC)
80
I D (A)
Rev. 03 — 22 September 2008
03nb37
03nb38
150
100
Fig 10. Transfer characteristics: drain current as a
Fig 12. Drain-source on-state resistance as a
(mΩ)
I D
(A)
R DSon
120
100
function of gate-source voltage; typical
values
function of drain current; typical values
80
60
40
20
20
15
10
0
5
0.0
0
N-channel TrenchMOS logic level FET
50
V GS (V) = 3
1.0
T j = 175
100
BUK9609-75A
150
O
C
2.0
3.2 3.4
200
T j = 25
3.6
250
© NXP B.V. 2008. All rights reserved.
3.0
3.8
O
V GS (V)
C
300
03nb39
I D (A)
03nb42
4
6
4.0
350
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