BUK9609-75A,118 NXP Semiconductors, BUK9609-75A,118 Datasheet - Page 5

• Manufacturer Part Number: BUK9609-75A,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9609-75A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8840pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056283118; BUK9609-75A /T3; BUK9609-75A /T3

NXP Semiconductors
6. Characteristics
Table 6.
BUK9609-75A_3
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
Figure 6
I
Figure 6
I
Figure 6
V
V
V
V
V
V
Figure
V
V
Figure
V
T
V
R
from upper edge of drain mounting base to
centre of die; T
from drain lead 6 mm from package to
centre of die; T
from source lead to source bond pad;
T
I
Figure 13
I
V
D
D
D
D
D
S
S
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
G(ext)
DS
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 °C; see
= 25 °C
= 25 A; V
= 20 A; dI
= 75 V; V
= 75 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 30 V; T
= 4.5 V; I
= 5 V; I
= 10 V; I
= 5 V; I
= 0 V; V
= 10 Ω; T
12; see
12; see
Rev. 03 — 22 September 2008
D
D
GS
S
DS
DS
DS
GS
GS
DS
D
/dt = -100 A/µs; V
D
= 25 A; T
= 25 A; T
j
GS
GS
L
= 25 °C
= 25 A; T
= 0 V; T
Figure 15
Figure 15
j
j
= V
= V
= V
= 25 A; T
Figure 14
= 1.2 Ω; V
GS
GS
= 10 V; T
= -10 V; T
= 25 V; f = 1 MHz;
= 25 °C
= 25 °C
j
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
j
j
j
= 25 °C; see
= 175 °C; see
= 25 °C; see
j
j
j
j
j
j
j
j
= 25 °C; see
= 175 °C; see
= -55 °C; see
= 25 °C
j
GS
= 175 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
j
j
= 25 °C
= -55 °C
= 5 V;
GS
= -10 V;
N-channel TrenchMOS logic level FET
Min
75
70
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK9609-75A
Typ
-
-
1.5
-
-
-
0.05
2
2
-
-
7.23
7.6
6631
905
610
47
185
424
226
2.5
4.5
7.5
0.85
70.3
213
© NXP B.V. 2008. All rights reserved.
Max
-
-
2
-
2.3
500
10
100
100
9.95
18.9
8.5
9
8840
1090
840
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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