FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 122

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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JFETs
SOT-223 N-Channel
JFTJ105
SOT-23 N-Channel
KSK595H
MMBF5484
MMBFJ210
MMBF5485
MMBFJ309
MMBFJ211
MMBF5457
MMBF5486
MMBFJ212
MMBFJ310
MMBF5458
MMBF5459
MMBF4393
MMBF4392
MMBF4416
MMBF4391
MMBFJ113
MMBFJ112
MMBF4416A
MMBFJ111
MMBFJ201
MMBF4117
MMBF5103
MMBF4118
MMBFJ202
BSR58
MMBF4093
MMBF4119
BSR57
MMBF4092
MMBF4091
Products
BV
(V)
25
20
25
25
25
25
25
25
25
25
25
25
25
30
30
30
30
35
35
35
35
40
40
40
40
40
40
40
40
40
40
40
GDS
Dissipation
Power
(mW)
1000
100
225
225
225
350
225
350
225
225
350
350
350
350
350
225
350
350
350
225
350
350
225
350
225
350
250
350
225
250
350
350
P
D
Min (V)
4.5
0.3
0.5
2.5
0.5
0.5
2.5
0.5
0.3
0.6
1.2
0.8
0.8
–
–
1
1
2
4
2
1
2
2
4
1
3
1
1
2
2
2
5
Typ (V) Max (V) @ I
0.6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
GS
1.5
4.5
6.5
1.5
1.8
2.7
10
10
10
10
3
3
4
4
6
6
6
7
8
3
5
6
3
5
6
3
4
4
5
6
6
7
(off)
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
500
D
1
1
1
1
1
(µA) @ V
2-117
Discrete Power Products –
15
15
15
10
15
15
15
15
10
15
15
20
20
15
20
15
20
10
15
10
20
15
20
10
15
20
20
DS
5
5
5
5
5
(V) Min (mA) Max (mA) @V
0.005
0.15
0.03
0.08
500
0.2
0.9
0.2
12
15
24
25
50
20
10
20
15
30
1
2
4
7
1
8
2
4
5
2
5
5
8
8
0.015
0.35
0.09
0.24
150
100
4.5
I
0.6
15
10
30
20
20
40
60
16
30
75
15
40
80
DSS
–
5
5
9
–
–
–
1
–
–
–
15
15
15
15
10
15
15
15
15
10
15
15
20
20
15
20
15
15
15
15
20
10
15
10
20
15
20
10
15
20
20
DS
5
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
0.07
0.08
3.5
1.5
4.5
7.5
0.1
10
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3
4
6
1
4
7
8
2
GFS
0.21
0.25
0.33
5.5
7.5
12
20
12
12
18
15
–
–
6
7
5
8
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
R
(Ω)
100
100
60
30
50
30
60
80
50
30
3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DS
I
0.0001
0.0001
0.0001
0.0002
0.0002
0.0002
D
0.003
0.001
0.001
0.001
(µA)
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–