FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 168
FQI12N60CTU
Manufacturer Part Number
FQI12N60CTU
Description
MOSFET N-CH 600V 12A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI12N60CTU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2290pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQI12N60CTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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Zener Diodes (Continued)
1N6008B
1N969B
BZX55C22
BZX79C22
1N5252B
1N6009B
1N970B
BZX55C24
BZX79C24
1N5253B
1N5254B
1N6010B
1N971B
BZX55C27
BZX79C27
1N5255B
1N5256B
1N6011B
1N972B
BZX55C30
BZX79C30
1N5257B
1N6012B
1N973B
BZX55C33
BZX79C33
1N5258B
1N6013B
1N974B
BZX55C36
BZX79C36
1N5259B
1N6014B
1N975B
BZX55C39
Products
V
Z
Voltage (V)
Nominal Zener
22
22
22
22
24
24
24
24
24
25
27
27
27
27
27
28
30
30
30
30
30
33
33
33
33
33
36
36
36
36
36
39
39
39
39
Dissipation (W)
P
D
Total Device
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2-163
Discrete Power Products –
Maximum Z
Bold = New Products (introduced January 2003 or later)
130
55
29
55
55
33
62
33
80
80
35
41
70
41
80
80
44
49
70
49
80
80
58
88
58
80
80
70
95
70
80
90
80
80
90
Z
(Ω)
Diodes and Rectifiers
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