FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 168

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Zener Diodes (Continued)
1N6008B
1N969B
BZX55C22
BZX79C22
1N5252B
1N6009B
1N970B
BZX55C24
BZX79C24
1N5253B
1N5254B
1N6010B
1N971B
BZX55C27
BZX79C27
1N5255B
1N5256B
1N6011B
1N972B
BZX55C30
BZX79C30
1N5257B
1N6012B
1N973B
BZX55C33
BZX79C33
1N5258B
1N6013B
1N974B
BZX55C36
BZX79C36
1N5259B
1N6014B
1N975B
BZX55C39
Products
V
Z
Voltage (V)
Nominal Zener
22
22
22
22
24
24
24
24
24
25
27
27
27
27
27
28
30
30
30
30
30
33
33
33
33
33
36
36
36
36
36
39
39
39
39
Dissipation (W)
P
D
Total Device
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2-163
Discrete Power Products –
Maximum Z
Bold = New Products (introduced January 2003 or later)
130
55
29
55
55
33
62
33
80
80
35
41
70
41
80
80
44
49
70
49
80
80
58
88
58
80
80
70
95
70
80
90
80
80
90
Z
(Ω)
Diodes and Rectifiers