FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 196
FQI12N60CTU
Manufacturer Part Number
FQI12N60CTU
Description
MOSFET N-CH 600V 12A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI12N60CTU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2290pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQI12N60CTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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Through-Hole
Note: Refer to individual product datasheet for specific product package dimensions
Discrete
PDF links for all the packaging information is at: http://www.fairchildsemi.com/products/discrete/packaging/pkg.html
TO-92
TO-92
TO-92
TO-92
Package Name
(Continued)
Prefixes Suffixes
(Continued)
MPSH
MPSH
MPSA
MPSL
MPSA
MPSL
MPF
MPS
MPF
MPS
BCX
BSS
NDF
BCX
BSS
NDF
KSC
KSP
KSA
KSD
KSB
2N
TIS
2N
TIS
BC
BF
BS
PF
PN
SS
BC
BF
BS
PF
PN
SS
SS
P
U
P
U
J
J
J61Z
MOSFET
X
X
Bipolar
X
X
X
X
Products
Diode
X
7-10
JFETs
X
X
X
IGBT
Pkg Method Qty (pcs)
Ammo Box
Bulk (BU)
Bulk
Bulk
Packagig Standard
1.5K-3.5K
1.5K
10K
2K
Packaging Information
Reel Dia
(inch)
n/a
n/a
n/a
n/a
Tape Width
(mm)
n/a
n/a
n/a
18
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