FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 65

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-220F (Continued)
FQPF32N12V2
FQPF46N15
FQPF28N15
FQPF16N15
FQPF14N15
FQPF9N15
FQPF6N15
FQPF5N15
IRLS640A
IRLS630A
IRLS620A
SSS45N20B
FQPF34N20
FQPF34N20L
FQPF32N20C
IRFS650B
FQPF18N20V2
FQPF19N20
FQPF19N20C
IRFS640B
FQPF10N20C
FQPF630
IRFS630B
FQPF7N20
FQPF7N20L
IRFS620B
FQPF5N20
FQPF5N20L
FQPF4N20L
FQPF4N20
IRFS610B
FQPF27N25
IRFS654B
FQPF16N25
FQPF16N25C
Products
Min. (V)
BV
120
150
150
150
150
150
150
150
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.042
0.065
0.075
0.075
0.082
0.085
10V
0.05
0.09
0.16
0.21
0.14
0.15
0.17
0.18
0.36
0.69
0.75
1.35
0.11
0.14
0.23
0.27
0.4
0.6
0.8
0.4
0.4
0.8
1.2
1.2
1.4
1.5
–
–
–
R
DS(ON)
0.18@5V
0.08@5V
0.78@5V
1.25@5V
0.4@5V
0.8@5V
1.4@5V
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-60
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
18.6
10.3
82.5
40.5
133
GS
6.5
5.4
6.8
4.8
7.2
41
85
40
23
18
10
40
60
55
95
20
31
45
20
19
22
12
50
95
27
41
6
4
8
5
=5V
I
D
25.6
16.7
11.6
17.5
17.5
11.8
15.6
9.8
6.9
4.2
9.8
6.5
4.1
9.5
6.3
4.8
3.5
3.5
2.8
3.3
9.5
32
20
28
28
18
19
18
14
15
5
9
5
5
3
(A)
MOSFETs
P
D
50
60
53
48
44
38
32
40
26
57
55
50
50
40
50
43
43
38
38
38
37
37
32
32
27
27
22
55
50
50
43
66
36
55
32
(W)