FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 145

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Bridge Rectifiers
DF005M
DF005S
DF01M
DF01S
DF02M
DF02S
DF04M
DF04S
DF06M
DF06S
DF08M
DF08S
DF10M
DF10S
GBPC12005
GBPC1201
GBPC1202
GBPC1204
GBPC1206
GBPC1208
GBPC1210
GBPC15005
GBPC1501
GBPC1502
GBPC1504
GBPC1506
GBPC1508
GBPC1510
GBPC25005
GBPC2501
GBPC2502
GBPC2504
GBPC2506
GBPC2508
DIP
GBPC|GBPC-W
Products
V
RRM
1000
1000
1000
1000
100
100
200
200
400
400
600
600
800
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
50
50
50
50
50
(V)
I
F(AV)
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
12
12
12
12
12
12
12
15
15
15
15
15
15
15
25
25
25
25
25
25
2-140
(A)
Discrete Power Products –
V
FM
Max (V)
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
Diodes and Rectifiers