FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 75

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-3PF (Continued)
FQAF11N90C
FQAF5N90
FQAF9P25
SFF9244
SFF9250L
FQAF12P20
SFF9240
FQAF22P10
FQAF17P10
SFF9140
FQAF47P06
TO-3PF P-Channel
Products
Min. (V)
BV
-250
-250
-200
-200
-200
-100
-100
-100
900
900
-60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.125
0.026
10V
0.62
0.47
0.19
1.1
2.3
0.8
0.5
0.2
–
R
DS(ON)
0.23@5V
4.5V
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-70
2.5V
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
60
31
29
45
90
31
46
40
30
43
84
=5V
I
D
12.6
11.5
16.6
12.4
7.2
4.1
7.1
7.6
13
38
6
(A)
MOSFETs
P
D
120
100
90
70
60
90
70
60
70
56
80
(W)