FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 202

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
Bipolar Power Transistor
F J AF 6810 D
(Continued)
A: TO-3P
AF: TO-3PF
B: D
D: D-PAK
U: I-PAK
P: TO-220
PF: TO-220F
L: TO-264
N: TO-92
E: TO-126
Built-in Diode
Serial Number
Package
BJT
Fairchild
2
-PAK
8-9
Small Signal Transistor
F J X 597 J
D: Built-in Diode
R: Digital Transistor
J: JFET
X: SOT-323 (3pin)
YF: SOT-563F (6pin)
Z: SOT-623F (3pin)
S: SOP-8
V: SOT-23
N: TO-92
NL: TO-92L
C: SOT-89
T: SOT-223
NS: TO-92S
Option
Serial Number
Package
BJT
Fairchild
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