FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 165

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Zener Diodes (Continued)
1N5990B
1N748A
BZX55C3V9
BZX79C3V9
1N4687
1N5229B
1N5991B
1N749A
BZX55C4V3
BZX79C4V3
1N5230B
1N5992B
1N750A
BZX55C4V7
BZX79C4V7
1N5231B
1N5993B
1N751A
BZX55C5V1
BZX79C5V1
1N5231C
1N5232B
1N5994B
1N752A
BZX55C5V6
BZX79C5V6
1N5233B
1N5234B
1N5995B
1N753A
BZX55C6V2
BZX79C6V2
1N5235B
1N5996B
1N754A
Products
V
Z
Voltage (V)
Nominal Zener
4.09
3.9
3.9
3.9
3.9
4.3
4.3
4.3
4.3
4.3
4.7
4.7
4.7
4.7
4.7
5.1
5.1
5.1
5.1
5.1
5.2
5.6
5.6
5.6
5.6
5.6
6.2
6.2
6.2
6.2
6.2
6.8
6.8
6.8
6
Dissipation (W)
P
D
Total Device
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2-160
Discrete Power Products –
Maximum Z
Bold = New Products (introduced January 2003 or later)
90
23
85
85
22
88
22
75
75
19
70
19
60
60
17
50
17
35
35
17
11
25
11
25
25
10
10
10
–
7
7
7
5
8
5
Z
(Ω)
Diodes and Rectifiers