IRFR220,118 NXP Semiconductors, IRFR220,118 Datasheet - Page 3

• Manufacturer Part Number: IRFR220,118
• Description: MOSFET N-CH 200V 4.8A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRFR220,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056819118; IRFR220 /T3; IRFR220 /T3

Philips Semiconductors
9397 750 08519
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
P der
mb
(%)
der
function of mounting base temperature.
= 25 C; I
120
100
=
80
60
40
20
0
---------------------- -
P
0
tot 25 C
P
tot
DM
25
is single pulse
I D
(A)
100%
50
10 -1
10 -2
10 2
10
1
75
1
100
R DSon = V DS / I D
P
125
t p
T mb ( o C)
T
150
03aa15
Rev. 01 — 14 August 2001
=
175
t p
T
t
10
N-channel enhancement mode field effect transistor
Fig 2. Normalized continuous drain current as a
DC
V
I
I der
der
GS
(%)
function of mounting base temperature.
120
100
=
80
60
40
20
10 V
0
-------------------
I
10 2
D 25 C
0
I
D
25
100 ms
t p = 10 s
100%
10 ms
1 ms
50
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
V DS (V)
75
003aaa129
100
10 3
125
IRFR220
T mb (
150
o
03aa23
C)
175
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