IRFR220,118 NXP Semiconductors, IRFR220,118 Datasheet - Page 8

• Manufacturer Part Number: IRFR220,118
• Description: MOSFET N-CH 200V 4.8A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRFR220,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056819118; IRFR220 /T3; IRFR220 /T3

Philips Semiconductors
9397 750 08519
Product data
Fig 12. Source (diode forward) current as a function of
T
j
= 25 C and 150 C; V
source-drain (diode forward) voltage; typical
values.
(A)
I S
6
4
3
7
5
2
1
0
0.2
0.4
GS
T j = 150 C
= 0 V
0.6
0.8
V SD (V)
25 C
003aaa136
Rev. 01 — 14 August 2001
1.0
N-channel enhancement mode field effect transistor
Fig 13. Gate-source voltage as a function of gate
I
D
V GS
= 4.8 A; V
(V)
charge; typical values.
10
6
4
8
2
0
0
DD
= 160 V
2
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
4
IRFR220
6
Q G (nC)
003aaa137
8
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