IRFR220,118 NXP Semiconductors, IRFR220,118 Datasheet - Page 5

• Manufacturer Part Number: IRFR220,118
• Description: MOSFET N-CH 200V 4.8A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRFR220,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056819118; IRFR220 /T3; IRFR220 /T3

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 08519
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain (reverse) diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
V
V
I
V
V
R
I
V
D
D
D
S
S
DS
DS
GS
GS
DS
GS
DD
GS
G
Rev. 01 — 14 August 2001
T
T
= 4.8 A; V
= 4.8 A; dI
= 250 A; V
= 250 A; V
= 4.8 A; V
= 18
j
j
= 200 V; V
= 160 V; V
= 20 V; V
= 10 V; I
= 50 V; I
= 0 V; V
= 100 V; R
= 0 V; V
= 25 C;
= 150 C;
GS
DD
DD
DS
S
D
D
Figure 7
/dt = 100 A/ s;
N-channel enhancement mode field effect transistor
GS
DS
= 2.9 A
Figure 7
= 2.9 A
GS
GS
DS
D
= 160 V; V
= 0 V;
= 30 V
= 25 V; f = 1 MHz;
= 20 ; V
= V
= 0 V
= 0 V
= 0 V; T
= 0 V
GS
Figure 12
and
;
and
Figure 9
j
GS
GS
8
= 125 C
8
= 10 V;
= 10 V;
Figure 11
Figure 13
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Min
200
2
1.7
IRFR220
Typ
3
10
0.7
10
1.5
4.0
280
41
25
5.0
17
22
18
85
0.2
Max
4
25
250
100
0.8
1.9
14
3.0
7.9
1.8
170
1.8
5 of 12
Unit
V
V
nA
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
C