IRFR220,118 NXP Semiconductors, IRFR220,118 Datasheet - Page 6

• Manufacturer Part Number: IRFR220,118
• Description: MOSFET N-CH 200V 4.8A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRFR220,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056819118; IRFR220 /T3; IRFR220 /T3

Philips Semiconductors
9397 750 08519
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
R DSon
j
j
= 25 C
= 25 C
(A)
I D
( )
function of drain-source voltage; typical values.
of drain current; typical values.
10
2
3
8
6
4
2
0
1
0
0
0
4.5
2
2
4
4
6
5
6
6
8
5.5
8
V GS (V) = 10
VGS (V) =
8
V DS (V)
003aaa132
10
003aaa134
6
I D (A)
4.5
5.5
10
5
Rev. 01 — 14 August 2001
10
12
N-channel enhancement mode field effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain source on-state resistance
T
j
= 25 C and 150 C; V
a
(A)
I D
1.0
function of gate-source voltage; typical values.
1.8
factor as a function of junction temperature.
3.4
2.6
0.2
2
4
3
5
1
0
-60
2
V DS > I D x R DSon
a
=
----------------------------- -
R
DSon 25 C
3
R
20
DSon
T j = 150 C
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
DS
I
D
4
R
DSon
100
25 C
IRFR220
5
T
V GS (V)
j
003aaa133
( C)
03aa31
180
6
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