IRFR220,118 NXP Semiconductors, IRFR220,118 Datasheet - Page 4

• Manufacturer Part Number: IRFR220,118
• Description: MOSFET N-CH 200V 4.8A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRFR220,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056819118; IRFR220 /T3; IRFR220 /T3

Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 08519
Product data
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting
base
Thermal characteristics
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to mounting base as a function of
Z th(j-mb)
pulse duration.
(K/W)
10 -1
10
1
10 -4
Rev. 01 — 14 August 2001
= 0.5
0.02
0.05
0.2
0.1
single pulse
Conditions
mounted on a metal clad substrate;
10 -3
N-channel enhancement mode field effect transistor
10 -2
10 -1
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Figure 4
P
t p
1
T
IRFR220
t p (s)
003aaa131
=
t p
T
Value Unit
3
t
10
4 of 12
K/W