IRFR220,118 NXP Semiconductors, IRFR220,118 Datasheet - Page 9

• Manufacturer Part Number: IRFR220,118
• Description: MOSFET N-CH 200V 4.8A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRFR220,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056819118; IRFR220 /T3; IRFR220 /T3

Philips Semiconductors
9. Package outline
Fig 14. SOT428.
9397 750 08519
Product data
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
Note
1. Measured from heatsink back to lead.
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT428
max.
2.38
2.22
L 2
A
A 1
0.65
0.45
(1)
b 1
0.89
0.71
A 2
1
e
0.89
0.71
b 2
e 1
IEC
E
b
2
max.
1.1
0.9
b 1
b
5.36
5.26
b 2
3
TO-252
JEDEC
w
0.4
0.2
D
L
A
c
M
H E
REFERENCES
A
max.
6.22
5.98
Rev. 01 — 14 August 2001
D
mounting
0
max.
4.81
4.45
base
D 1
seating plane
L 1
A 1
SC-63
max.
scale
6.73
6.47
EIAJ
10
E
N-channel enhancement mode field effect transistor
c
A 2
min.
4.0
A
E 1
20 mm
y
2.285 4.57
e
e 1
E 1
max.
10.4
H E
9.6
2.95
2.55
L
PROJECTION
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
EUROPEAN
min.
0.5
L 1
D 1
0.7
0.5
L 2
IRFR220
0.2
w
ISSUE DATE
98-04-07
99-09-13
max.
0.2
y
SOT428
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