IRFR220,118 NXP Semiconductors, IRFR220,118 Datasheet - Page 7

• Manufacturer Part Number: IRFR220,118
• Description: MOSFET N-CH 200V 4.8A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRFR220,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056819118; IRFR220 /T3; IRFR220 /T3

Philips Semiconductors
9397 750 08519
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
(V)
I
V
D
GS
= 1 mA; V
5
4
3
2
1
0
junction temperature.
-60
= 0 V; f = 1 MHz
DS
= V
0
GS
60
max
typ
min
120
(pF)
C
10 3
10 2
10
T j (
0
03aa32
o
C)
180
Rev. 01 — 14 August 2001
1
N-channel enhancement mode field effect transistor
Fig 10. Sub-threshold drain current as a function of
T
(A)
I D
j
10
10 -6
10 -3
10 -4
10 -1
10 -2
10 -5
= 25 C; V
gate-source voltage.
0
V DS (V)
003aaa135
C iss
C oss
C rss
DS
1
10 2
= 5 V
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
2
min
3
typ
IRFR220
4
V GS (V)
max
03aa35
5
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