BF1208D,115 NXP Semiconductors, BF1208D,115 Datasheet - Page 10

• Manufacturer Part Number: BF1208D,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208D,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060901115; BF1208D T/R; BF1208D T/R

NXP Semiconductors
BF1208D_1
Product data sheet
8.1.2 Scattering parameters for amplifier A
8.1.3 Noise data for amplifier A
Table 9.
V
Table 10.
V
unless otherwise specified.
f
(MHz)
40
100
200
300
400
500
600
700
800
900
1000
f (MHz)
400
800
Fig 16. Amplifier A: output admittance as a function of frequency; typical values
DS(A)
DS(A)
= 5 V; V
= 5 V; V
s
Magnitude
(ratio)
0.992
0.99152
0.98685
0.97979
0.97176
0.96209
0.95108
0.93915
0.92742
0.91573
0.90429
V
11
DS(A)
Scattering parameters for amplifier A
Noise data for amplifier A
G2-S
G2-S
= 5 V; V
= 4 V; I
= 4 V; I
NF
0.9
1.1
b
G2-S
Angle
(deg)
os
min
(mS)
3.037 3.21
7.62
15.12 3.11006
22.49 3.06743
29.74 3.01634
36.76 2.95125
43.63 2.87828
50.35 2.79946
56.82 2.71508
62.95 2.62937
68.83 2.54239
10
10
, g
Rev. 01 — 16 May 2007
D(A)
D(A)
10
= 4 V; V
os
(dB)
1
1
2
10
= 19 mA; V
= 19 mA; V
s
Magnitude
(ratio)
3.13270
21
DS(B)
= V
(ratio)
0.77
0.73
opt
G1-S(B)
DS(B)
DS(B)
Angle
(deg)
177.04 0.00763
172.06 0.00182
164.12 0.00350
156.24 0.00511
148.56 0.00664
141.00 0.00805
133.56 0.00931
126.28 0.01042
119.20 0.01141
112.29 0.01224
105.56 0.01297
= 0 V; V
= 0 V; V
= 0 V; I
10
2
b
g
os
os
D(A)
s
Magnitude
(ratio)
G1-S(B)
G1-S(B)
12
f (MHz)
= 19 mA
Dual N-channel dual gate MOSFET
(deg)
22.7
45.75
= 0 V; T
= 0 V; T
001aag360
10
Angle
(deg)
87.34
85.21
78.32
73.45
69.12
64.73
60.38
56.16
52.16
48.31
44.63
amb
amb
3
= 25 C; typical values.
= 25 C; typical values;
s
Magnitude
(ratio)
0.992
0.99168
0.99047
0.98876
0.98662
0.98424
0.98168
0.97884
0.97630
0.97350
0.97115
BF1208D
22
© NXP B.V. 2007. All rights reserved.
r
0.65
0.62
n
(ratio)
Angle
(deg)
10 of 22
1.139
2.93
5.83
8.72
11.57
14.39
17.21
19.97
22.68
25.42
28.14