BF1208D,115 NXP Semiconductors, BF1208D,115 Datasheet - Page 16

• Manufacturer Part Number: BF1208D,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208D,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060901115; BF1208D T/R; BF1208D T/R

NXP Semiconductors
BF1208D_1
Product data sheet
Fig 29. Amplifier B: input admittance as a function of
Fig 31. Amplifier B: reverse transfer admittance and
b
(mS)
is
( S)
Y
, g
10
rs
10
10
10
10
10
is
1
1
2
1
3
2
V
I
frequency; typical values
V
I
phase as a function of frequency; typical values
10
D(B)
10
D(B)
DS(B)
DS(B)
= 15 mA
= 15 mA
= 5 V; V
= 5 V; V
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
b
g
Y
rs
is
is
rs
DS(A)
DS(A)
f (MHz)
f (MHz)
= V
= V
G1-S(A)
G1-S(A)
001aag373
001aag375
= 0 V;
= 0 V;
10
10
Rev. 01 — 16 May 2007
3
3
(deg)
10
10
10
1
rs
3
2
Fig 30. Amplifier B: forward transfer admittance and
Fig 32. Amplifier B: output admittance as a function of
b
os
(mS)
(mS)
Y
10
10
, g
fs
10
10
10
os
1
1
2
1
2
V
I
phase as a function of frequency; typical values
V
I
frequency; typical values
10
10
D(B)
D(B)
DS(B)
DS(B)
= 15 mA
= 15 mA
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOSFET
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
b
g
Y
os
os
fs
fs
DS(A)
DS(A)
f (MHz)
f (MHz)
= V
= V
BF1208D
© NXP B.V. 2007. All rights reserved.
G1-S(A)
G1-S(A)
001aag374
001aag376
= 0 V;
= 0 V;
10
10
3
3
(deg)
10
10
1
fs
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2