BF1208D,115 NXP Semiconductors, BF1208D,115 Datasheet - Page 18

• Manufacturer Part Number: BF1208D,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208D,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060901115; BF1208D T/R; BF1208D T/R

NXP Semiconductors
9. Test information
BF1208D_1
Product data sheet
Fig 33. Cross modulation test set-up for amplifier A
Fig 34. Cross modulation test set-up for amplifier B
R GEN
50
R GEN
V i
50
50
V i
Rev. 01 — 16 May 2007
50
50
50
4.7 nF
4.7 nF
4.7 nF
V
V
4.7 nF
4.7 nF
4.7 nF
AGC
5V
GG
10 k
R G1
V
V
AGC
0V
G1A
G1B
GG
G2
10 k
R G1
G1A
G1B
BF1208D
G2
BF1208D
DA
S
DB
Dual N-channel dual gate MOSFET
V
V
DS(A)
DS(B)
5V
5V
DA
S
DB
L1
2.2 H
L2
2.2 H
V
V
4.7 nF
4.7 nF
4.7 nF
DS(A)
DS(B)
5V
5V
L1
2.2 H
L2
2.2 H
001aag399
4.7 nF
4.7 nF
4.7 nF
001aag398
R L
50
R L
50
BF1208D
© NXP B.V. 2007. All rights reserved.
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