BF1208D,115 NXP Semiconductors, BF1208D,115 Datasheet - Page 6

• Manufacturer Part Number: BF1208D,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208D,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060901115; BF1208D T/R; BF1208D T/R

NXP Semiconductors
Table 8.
Common source; T
[1]
[2]
[3]
BF1208D_1
Product data sheet
Symbol
Xmod
Fig 4. Amplifier A: transfer characteristics; typical
For the MOSFET not in use: V
Calculated from S-parameters.
Measured in
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
D
30
20
10
0
V
values
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(A)
Parameter
cross modulation
Dynamic characteristics for amplifier A
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 5 V; V
Figure 33
8.1.1 Graphics for amplifier A
0.4
amb
G1-S(B)
= 25 C; V
test circuit.
0.8
= V
G1-S(B)
DS(B)
G2-S
1.2
= 0 V; T
= 0 V; V
= 4 V; V
(2)
(3)
1.6
Conditions
input level for k = 1 %; f
f
unw
V
j
001aaa554
= 25 C.
G1-S
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
DS(B)
(1)
DS
= 60 MHz
(4)
(5)
(6)
(7)
(V)
= 5 V; I
= 0 V.
2
Rev. 01 — 16 May 2007
[1]
D
…continued
= 19 mA; unless otherwise specified.
Fig 5. Amplifier A: output characteristics; typical
w
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
(8) V
(9) V
= 50 MHz;
I
D
32
24
16
8
0
V
values
0
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G2-S
= 4 V; V
= 1.8 V.
= 1.7 V.
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.
= 1 V.
Dual N-channel dual gate MOSFET
G1-S(B)
2
= V
[3]
DS(B)
Min
90
-
-
102
= 0 V; T
4
Typ
-
90
99
105
BF1208D
V
© NXP B.V. 2007. All rights reserved.
DS
j
001aaa555
= 25 C.
(V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Max Unit
-
-
-
-
6
dB V
dB V
dB V
dB V
6 of 22