BF1208D,115 NXP Semiconductors, BF1208D,115 Datasheet - Page 19

• Manufacturer Part Number: BF1208D,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208D,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060901115; BF1208D T/R; BF1208D T/R

NXP Semiconductors
10. Package outline
Fig 35. Package outline SOT666
BF1208D_1
Product data sheet
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
3
REFERENCES
4
Rev. 01 — 16 May 2007
0.5
e
1
w
A
M
1.7
1.5
A
H
E
JEITA
scale
1
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
H E
Dual N-channel dual gate MOSFET
E
detail X
PROJECTION
EUROPEAN
L p
BF1208D
c
© NXP B.V. 2007. All rights reserved.
X
ISSUE DATE
04-11-08
06-03-16
SOT666
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