BF1208D,115 NXP Semiconductors, BF1208D,115 Datasheet - Page 12

• Manufacturer Part Number: BF1208D,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208D,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060901115; BF1208D T/R; BF1208D T/R

NXP Semiconductors
BF1208D_1
Product data sheet
Fig 17. Amplifier B: transfer characteristics; typical
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
D
30
20
10
0
V
values
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(B)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 5 V; V
8.2.1 Graphics for amplifier B
0.4
DS(A)
0.8
= V
G1-S(A)
1.2
= 0 V; T
(1)
(2)
(3)
1.6
V
j
001aag361
= 25 C.
G1-S
(4)
(5)
(6)
(7)
(V)
2.0
Rev. 01 — 16 May 2007
Fig 18. Amplifier B: output characteristics; typical
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
D
24
16
8
0
V
values
0
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G2-S
= 4 V; V
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.
= 1 V.
Dual N-channel dual gate MOSFET
DS(A)
2
= V
G1-S(A)
= 0 V; T
4
BF1208D
V
© NXP B.V. 2007. All rights reserved.
DS
j
001aag362
= 25 C.
(V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
6
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