BF1208D,115 NXP Semiconductors, BF1208D,115 Datasheet - Page 20

• Manufacturer Part Number: BF1208D,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208D,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060901115; BF1208D T/R; BF1208D T/R

NXP Semiconductors
11. Abbreviations
12. Revision history
Table 15.
BF1208D_1
Product data sheet
Document ID
BF1208D_1
Revision history
Table 14.
Acronym
AGC
DC
MOSFET
UHF
VHF
Release date
20070516
Abbreviations
Description
Automatic Gain Control
Direct Current
Metal-Oxide Semiconductor Field-Effect Transistor
Ultra High Frequency
Very High Frequency
Data sheet status
Product data sheet
Rev. 01 — 16 May 2007
Change notice
-
Dual N-channel dual gate MOSFET
Supersedes
-
BF1208D
© NXP B.V. 2007. All rights reserved.
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