NESG2101M16-A CEL, NESG2101M16-A Datasheet - Page 10
![TRANS NPN 2GHZ M16](/photos/29/5/290514/nesg_sml.jpg)
NESG2101M16-A
Manufacturer Part Number
NESG2101M16-A
Description
TRANS NPN 2GHZ M16
Manufacturer
CEL
Datasheet
1.NESG2101M16-T3-A.pdf
(13 pages)
Specifications of NESG2101M16-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
17GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.2dB @ 2GHz
Gain
11dB ~ 13dB
Power - Max
190mW
Dc Current Gain (hfe) (min) @ Ic, Vce
130 @ 15mA, 2V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
M16
Continuous Collector Current
35 mA
Emitter- Base Voltage Vebo
1.5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Power Dissipation
175 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
10
Remark The graphs indicate nominal characteristics.
5
4
3
2
0
5
3
2
1
0
4
3
2
0
1
4
5
1
1
1
1
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
G
G
Collector Current I
Collector Current I
Collector Current I
a
a
10
10
10
NF
NF
NF
G
a
C
C
C
(mA)
(mA)
(mA)
V
f = 1 GHz
V
f = 2 GHz
V
f = 3 GHz
CE
CE
CE
= 1 V,
= 1 V,
= 1 V,
Data Sheet PU10395EJ03V0DS
100
100
100
15
10
5
25
20
15
10
5
0
25
20
0
25
20
15
10
5
0
2
5
4
3
2
0
5
4
3
2
1
0
5
4
3
1
0
1
1
1
1
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
G
a
G
Collector Current I
Collector Current I
Collector Current I
a
10
10
10
NF
NF
NF
G
a
C
C
C
(mA)
(mA)
(mA)
NESG2101M16
V
f = 2 GHz
V
f = 3 GHz
V
f = 1 GHz
CE
CE
CE
= 2 V,
= 2 V,
= 2 V,
100
100
100
25
20
15
10
5
0
25
20
15
10
5
0
25
20
15
10
5
0