NESG2101M16-A CEL, NESG2101M16-A Datasheet - Page 4

• Manufacturer Part Number: NESG2101M16-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2101M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 2GHz
• Gain: 11dB ~ 13dB
• Power - Max: 190mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M16
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

4
Remark The graphs indicate nominal characteristics.
1 000
1 000
100
100
100
90
80
70
60
50
40
30
20
10
10
10
0
0.1
0.1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage V
1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current I
Collector Current I
1
1
2
500 A
450 A
3
400 A
μ
μ
350 A
μ
C
C
10
10
4
μ
(mA)
(mA)
300 A
μ
CE
250 A
I
V
V
B
(V)
CE
CE
= 50 A
5
200 A
150 A
100 A
μ
= 1 V
= 3 V
Data Sheet PU10395EJ03V0DS
μ
μ
μ
μ
100
100
6
1 000
1 000
100
100
10
10
0.1
0.1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current I
Collector Current I
1
1
NESG2101M16
C
C
10
10
(mA)
(mA)
V
V
CE
CE
= 2 V
= 4 V
100
100