NESG2101M16-A CEL, NESG2101M16-A Datasheet - Page 6

• Manufacturer Part Number: NESG2101M16-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2101M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 2GHz
• Gain: 11dB ~ 13dB
• Power - Max: 190mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M16
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

6
Remark The graphs indicate nominal characteristics.
35
30
25
20
15
10
40
35
30
25
20
10
15
5
0
0.1
5
0
0.1
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
|S
|S
MSG
21e
21e
MSG
|
|
2
2
Frequency f (GHz)
Frequency f (GHz)
1
1
MAG
MAG
10
10
V
I
V
I
C
C
CE
CE
= 50 mA
= 50 mA
Data Sheet PU10395EJ03V0DS
= 1 V,
= 3 V,
100
100
40
35
30
25
20
15
10
40
35
30
25
20
15
10
0
5
0
0.1
5
0.1
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
|S
MSG
21e
MSG
|S
|
2
21e
Frequency f (GHz)
Frequency f (GHz)
1
1
|
2
MAG
MAG
NESG2101M16
10
10
V
I
V
I
C
C
CE
CE
= 50 mA
= 40 mA
= 2 V,
= 4 V,
100
100