NESG2101M16-A CEL, NESG2101M16-A Datasheet - Page 3

• Manufacturer Part Number: NESG2101M16-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2101M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 2GHz
• Gain: 11dB ~ 13dB
• Power - Max: 190mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M16
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
0.0001
0.0001
0.001
0.001
0.01
0.01
300
250
200
150
100
100
100
190
0.1
0.1
10
10
50
1
1
0
0.4
0.4
V
V
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
COLLECTOR CURRENT vs.
vs. AMBIENT TEMPERATURE
CE
CE
0.5
0.5
25
= 1 V
= 3 V
Base to Emitter Voltage V
Base to Emitter Voltage V
Ambient Temperature T
0.6
0.6
50
Mounted on Glass Epoxy PCB
(1.08 cm
0.7
0.7
75
2
× 1.0 mm (t) )
100
0.8
0.8
A
A
BE
BE
(°C)
= +25°C, unless otherwise specified)
(V)
(V)
125
0.9
0.9
Data Sheet PU10395EJ03V0DS
150
1.0
1.0
0.0001
0.0001
0.001
0.001
0.01
0.01
100
100
1.0
0.8
0.6
0.4
0.2
0.1
0.1
10
10
0
1
1
0.4
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
CE
0.5
0.5
Collector to Base Voltage V
= 2 V
= 4 V
Base to Emitter Voltage V
Base to Emitter Voltage V
2
0.6
0.6
4
0.7
0.7
NESG2101M16
6
0.8
0.8
BE
BE
CB
f = 1 MHz
(V)
(V)
8
(V)
0.9
0.9
1.0
1.0
10
3