NESG2101M16-A CEL, NESG2101M16-A Datasheet - Page 2

• Manufacturer Part Number: NESG2101M16-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2101M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 2GHz
• Gain: 11dB ~ 13dB
• Power - Max: 190mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M16
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
Linear Gain
FE
Notes 1. Pulse measurement: PW ≤ 350
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
3. MSG =
Parameter
130 to 260
S
S
FB/YFB
21
12
zH
MSG
h
C
Symbol
⏐S
P
FE
re
I
O (1 dB)
I
NF
NF
CBO
EBO
G
G
G
f
21e
Note 1
Note 2
3
T
a
a
L
Note
⏐
2
μ
A
V
V
V
V
V
V
Z
V
Z
V
Z
V
Z
V
V
V
f = 2 GHz, Z
V
Z
s, Duty Cycle ≤ 2%
Data Sheet PU10395EJ03V0DS
= +25°C)
S
S
S
S
S
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
CE
CE
CE
= Z
= Z
= Z
= Z
= Z
= 1 V, I
= 5 V, I
= 2 V, I
= 3 V, I
= 3 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 3 V, I
= 3.6 V, I
= 3.6 V, I
Sopt
Sopt
Sopt
Sopt
Sopt
, Z
, Z
, Z
, Z
, Z
E
C
C
C
C
C
C
C
C
E
C
Test Conditions
L
L
L
L
L
S
= 0 mA
= 0 mA
= 0 mA, f = 1 MHz
= 15 mA
= 50 mA, f = 2 GHz
= 50 mA, f = 2 GHz
= 10 mA, f = 2 GHz,
= 7 mA, f = 1 GHz,
= 10 mA, f = 2 GHz,
= 7 mA, f = 1 GHz,
= 50 mA, f = 2 GHz
= Z
= Z
= Z
= Z
C (set)
C
= Z
= Z
= 10 mA, f = 2 GHz,
Lopt
Lopt
Lopt
Lopt
Lopt
Sopt
= 10 mA (RF OFF),
, Z
L
= Z
Lopt
MIN.
11.5
11.0
14.5
130
14
−
−
−
−
−
−
−
−
TYP.
13.5
13.0
19.0
17.0
190
0.9
0.6
0.4
17
21
15
−
−
NESG2101M16
MAX.
100
100
260
1.2
0.5
−
−
−
−
−
−
−
−
GHz
dBm
dBm
Unit
nA
nA
dB
dB
dB
dB
dB
dB
pF
−