NESG2101M16-A CEL, NESG2101M16-A Datasheet - Page 12

• Manufacturer Part Number: NESG2101M16-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2101M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 2GHz
• Gain: 11dB ~ 13dB
• Power - Max: 190mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M16
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
12
Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance
and heat sinking.
Data Sheet PU10395EJ03V0DS
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
4. Base
5. Emitter
6. Emitter
1.0±0.05
0.8
+0.07
–0.05
NESG2101M16