NESG2101M16-A CEL, NESG2101M16-A Datasheet - Page 9

• Manufacturer Part Number: NESG2101M16-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2101M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 2GHz
• Gain: 11dB ~ 13dB
• Power - Max: 190mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M16
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Remark The graphs indicate nominal characteristics.
OUTPUT POWER, POWER GAIN, I
COLLECTOR EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN, I
COLLECTOR EFFICIENCY vs. INPUT POWER
25
10
–5
25
10
–5
20
15
20
15
–20
–15
5
0
5
0
V
I
cq
CE
= 10 mA
= 3.6 V, f = 3 GHz
–15
–10
P
G
out
G
P
Input Power P
P
Input Power P
–10
–5
–5
0
V
I
cq
CE
= 10 mA
in
in
I
C
= 3.6 V, f = 1 GHz
(dBm)
(dBm)
0
5
I
C
P
η
out
C
η
10
C
C
C
5
,
,
Data Sheet PU10395EJ03V0DS
10
15
120
100
80
60
40
20
0
120
100
80
60
40
20
0
OUTPUT POWER, POWER GAIN, I
COLLECTOR EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN, I
COLLECTOR EFFICIENCY vs. INPUT POWER
25
20
15
10
–5
25
20
15
10
–5
–10
–15
5
0
5
0
V
I
cq
CE
–10
= 10 mA
–5
= 3.6 V, f = 5.2 GHz
G
P
G
P
out
P
Input Power P
Input Power P
–5
0
P
out
5
0
V
I
cq
CE
= 10 mA
in
in
I
C
= 3.6 V, f = 2 GHz
(dBm)
(dBm)
10
5
η
NESG2101M16
η
C
I
C
C
10
15
C
C
,
,
15
20
120
100
80
60
40
20
0
120
100
80
60
40
20
0
9