NESG2101M16-A CEL, NESG2101M16-A Datasheet - Page 9
![TRANS NPN 2GHZ M16](/photos/29/5/290514/nesg_sml.jpg)
NESG2101M16-A
Manufacturer Part Number
NESG2101M16-A
Description
TRANS NPN 2GHZ M16
Manufacturer
CEL
Datasheet
1.NESG2101M16-T3-A.pdf
(13 pages)
Specifications of NESG2101M16-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
17GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.2dB @ 2GHz
Gain
11dB ~ 13dB
Power - Max
190mW
Dc Current Gain (hfe) (min) @ Ic, Vce
130 @ 15mA, 2V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
M16
Continuous Collector Current
35 mA
Emitter- Base Voltage Vebo
1.5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Power Dissipation
175 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Remark The graphs indicate nominal characteristics.
OUTPUT POWER, POWER GAIN, I
COLLECTOR EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN, I
COLLECTOR EFFICIENCY vs. INPUT POWER
25
10
–5
25
10
–5
20
15
20
15
–20
–15
5
0
5
0
V
I
cq
CE
= 10 mA
= 3.6 V, f = 3 GHz
–15
–10
P
G
out
G
P
Input Power P
P
Input Power P
–10
–5
–5
0
V
I
cq
CE
= 10 mA
in
in
I
C
= 3.6 V, f = 1 GHz
(dBm)
(dBm)
0
5
I
C
P
η
out
C
η
10
C
C
C
5
,
,
Data Sheet PU10395EJ03V0DS
10
15
120
100
80
60
40
20
0
120
100
80
60
40
20
0
OUTPUT POWER, POWER GAIN, I
COLLECTOR EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN, I
COLLECTOR EFFICIENCY vs. INPUT POWER
25
20
15
10
–5
25
20
15
10
–5
–10
–15
5
0
5
0
V
I
cq
CE
–10
= 10 mA
–5
= 3.6 V, f = 5.2 GHz
G
P
G
P
out
P
Input Power P
Input Power P
–5
0
P
out
5
0
V
I
cq
CE
= 10 mA
in
in
I
C
= 3.6 V, f = 2 GHz
(dBm)
(dBm)
10
5
η
NESG2101M16
η
C
I
C
C
10
15
C
C
,
,
15
20
120
100
80
60
40
20
0
120
100
80
60
40
20
0
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