NESG2101M16-A CEL, NESG2101M16-A Datasheet - Page 11

• Manufacturer Part Number: NESG2101M16-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2101M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 2GHz
• Gain: 11dB ~ 13dB
• Power - Max: 190mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M16
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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S-PARAMETERS
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Remark The graphs indicate nominal characteristics.
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
2
5
4
2
1
0
5
4
1
0
3
3
1
1
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
G
a
Collector Current I
Collector Current I
10
10
NF
NF
G
a
C
C
(mA)
(mA)
V
f = 1 GHz
V
f = 3 GHz
CE
CE
= 3 V,
= 3 V,
Data Sheet PU10395EJ03V0DS
100
100
25
20
15
10
5
0
25
20
15
10
5
0
5
4
2
1
0
3
1
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
G
a
Collector Current I
10
NF
C
(mA)
NESG2101M16
V
f = 2 GHz
CE
= 3 V,
100
25
20
15
10
5
0
11