MZ0912B100Y,114 NXP Semiconductors, MZ0912B100Y,114 Datasheet
MZ0912B100Y,114
Specifications of MZ0912B100Y,114
MZ0912B100Y TRAY
MZ0912B100Y TRAY
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MZ0912B100Y,114 Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 ...
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Philips Semiconductors NPN microwave power transistors FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry improves power sharing ...
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Philips Semiconductors NPN microwave power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CES V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC) ...
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Philips Semiconductors NPN microwave power transistors THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to mounting-base T th j-mb R thermal resistance from mounting-base to heatsink T th mb-h Z thermal impedance from junction to heatsink ...
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Philips Semiconductors NPN microwave power transistors 130 handbook, halfpage P L (W) 120 110 0. Fig.4 Load power as a function of frequency. (In broadband test circuit ...
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Philips Semiconductors NPN microwave power transistors handbook, full pagewidth 1 s List of components COMPONENT DESCRIPTION L1 0.65 mm diameter copper wire L2 4 turns 0.65 mm diameter copper wire C1 capacitor C2 tantalum capacitor C3 electrolytic capacitor C4 feedthrough ...
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Philips Semiconductors NPN microwave power transistors handbook, full pagewidth 40 Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: = 10. r 1997 Feb 0.635 Fig.7 Broadband ...
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Philips Semiconductors NPN microwave power transistors handbook, full pagewidth 0 100 Fig.8 Input impedance as a function of frequency associated with optimum load ...
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Philips Semiconductors NPN microwave power transistors PACKAGE OUTLINES handbook, full pagewidth 3.3 2.9 Dimensions in mm. Torque on nut: max 0.4 Nm. Recommended screw: M3 Recommended pitch for mounting screw: 19 mm. 1997 Feb 20 12.85 max 0.15 max 3 ...
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Philips Semiconductors NPN microwave power transistors handbook, full pagewidth 0.1 3.5 2.9 X 3.4 3.2 Dimensions in mm. Torque on nut: max 0.5 Nm. Recommended screw: M3 1997 Feb 20 24 max 0 seating plane Y 3.1 1 ...
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Philips Semiconductors NPN microwave power transistors DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...
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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...