MZ0912B100Y,114 NXP Semiconductors, MZ0912B100Y,114 Datasheet - Page 3
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MZ0912B100Y,114
Manufacturer Part Number
MZ0912B100Y,114
Description
TRANSISTOR POWER NPN SOT439A
Manufacturer
NXP Semiconductors
Datasheet
1.MZ0912B100Y114.pdf
(12 pages)
Specifications of MZ0912B100Y,114
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
1.215GHz
Gain
7.6dB
Power - Max
290W
Current - Collector (ic) (max)
6A
Mounting Type
Surface Mount
Package / Case
SOT-443A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Noise Figure (db Typ @ F)
-
Other names
933994050114
MZ0912B100Y TRAY
MZ0912B100Y TRAY
MZ0912B100Y TRAY
MZ0912B100Y TRAY
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1997 Feb 20
handbook, halfpage
V
V
V
V
I
P
T
T
T
C
stg
j
sld
CBO
CES
CEO
EBO
tot
NPN microwave power transistors
SYMBOL
t
Fig.3
p
= 10 s;
P tot
(W)
300
200
100
0
50
Maximum power dissipation derating as a
function of mounting-base temperature.
= 10 %; P
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
(peak power)
storage temperature
operating junction temperature
soldering temperature
0
tot max
= 290 W.
PARAMETER
100
T mb ( C)
MGL046
200
open emitter
R
open base
open collector
t
t
T
up to 0.2 mm from ceramic;
t
p
p
mb
BE
10 s
10 s;
10 s;
= 75 C
= 0
3
CONDITIONS
10 %
10 %;
MX0912B100Y; MZ0912B100Y
65
MIN.
65
60
20
3
6
290
+200
200
235
Product specification
MAX.
V
V
V
V
A
W
C
C
C
UNIT