MZ0912B100Y,114 NXP Semiconductors, MZ0912B100Y,114 Datasheet - Page 3

• Manufacturer Part Number: MZ0912B100Y,114
• Description: TRANSISTOR POWER NPN SOT439A
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B100Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 7.6dB
• Power - Max: 290W
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 933994050114; MZ0912B100Y TRAY; MZ0912B100Y TRAY

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1997 Feb 20
handbook, halfpage
V
V
V
V
I
P
T
T
T
C
stg
j
sld
CBO
CES
CEO
EBO
tot
NPN microwave power transistors
SYMBOL
t
Fig.3
p
= 10 s;
P tot
(W)
300
200
100
0
50
Maximum power dissipation derating as a
function of mounting-base temperature.
= 10 %; P
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
(peak power)
storage temperature
operating junction temperature
soldering temperature
0
tot max
= 290 W.
PARAMETER
100
T mb ( C)
MGL046
200
open emitter
R
open base
open collector
t
t
T
up to 0.2 mm from ceramic;
t
p
p
mb
BE
10 s
10 s;
10 s;
= 75 C
= 0
3
CONDITIONS
10 %
10 %;
MX0912B100Y; MZ0912B100Y
65
MIN.
65
60
20
3
6
290
+200
200
235
Product specification
MAX.
V
V
V
V
A
W
C
C
C
UNIT