MZ0912B100Y,114 NXP Semiconductors, MZ0912B100Y,114 Datasheet - Page 6

• Manufacturer Part Number: MZ0912B100Y,114
• Description: TRANSISTOR POWER NPN SOT439A
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B100Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 7.6dB
• Power - Max: 290W
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 933994050114; MZ0912B100Y TRAY; MZ0912B100Y TRAY

Philips Semiconductors
List of components
1997 Feb 20
handbook, full pagewidth
L1
L2
C1
C2
C3
C4
C5, C6
COMPONENT
NPN microwave power transistors
0.65 mm diameter copper wire
4 turns 0.65 mm diameter
copper wire
capacitor
tantalum capacitor
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
DESCRIPTION
1 s
1 s
300 s
3 ms
Fig.6 Pulse definition.
100 pF
10 F; 50 V
470 F; 63 V
0.6 to 4.5 pF
VALUE
6
total length = 12 mm;
height of loop = 12 mm
int. dia. 3 mm; L = 5 mm
MX0912B100Y; MZ0912B100Y
DIMENSIONS
MGK066
ATC, ref. 100A101KP50X
Erie, ref. 1250-003
Tekelec, ref. 727.1
CATALOGUE NO.
Product specification