MZ0912B100Y,114 NXP Semiconductors, MZ0912B100Y,114 Datasheet - Page 5

• Manufacturer Part Number: MZ0912B100Y,114
• Description: TRANSISTOR POWER NPN SOT439A
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B100Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 7.6dB
• Power - Max: 290W
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 933994050114; MZ0912B100Y TRAY; MZ0912B100Y TRAY

Philips Semiconductors
1997 Feb 20
handbook, halfpage
NPN microwave power transistors
V
Fig.4
CC
(W)
130
P L
120
110
= 50 V; t
0.95
Load power as a function of frequency.
(In broadband test circuit as shown in Fig.7)
p
= 10 s;
1.05
= 10%.
1.15
f (GHz)
MGL047
1.25
5
handbook, halfpage
V
Fig.5
CC
(%)
C
= 50 V; t
50
45
40
MX0912B100Y; MZ0912B100Y
0.95
Collector efficiency as a function of
frequency. (In broadband test circuit as
shown in Fig.7)
p
= 10 s;
1.05
= 10%.
1.15
Product specification
f (GHz)
MGL048
1.25