MZ0912B100Y,114 NXP Semiconductors, MZ0912B100Y,114 Datasheet - Page 5
![TRANSISTOR POWER NPN SOT439A](/photos/5/65/56571/sot-443a_sot443a_pkg_sml.jpg)
MZ0912B100Y,114
Manufacturer Part Number
MZ0912B100Y,114
Description
TRANSISTOR POWER NPN SOT439A
Manufacturer
NXP Semiconductors
Datasheet
1.MZ0912B100Y114.pdf
(12 pages)
Specifications of MZ0912B100Y,114
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
1.215GHz
Gain
7.6dB
Power - Max
290W
Current - Collector (ic) (max)
6A
Mounting Type
Surface Mount
Package / Case
SOT-443A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Noise Figure (db Typ @ F)
-
Other names
933994050114
MZ0912B100Y TRAY
MZ0912B100Y TRAY
MZ0912B100Y TRAY
MZ0912B100Y TRAY
Philips Semiconductors
1997 Feb 20
handbook, halfpage
NPN microwave power transistors
V
Fig.4
CC
(W)
130
P L
120
110
= 50 V; t
0.95
Load power as a function of frequency.
(In broadband test circuit as shown in Fig.7)
p
= 10 s;
1.05
= 10%.
1.15
f (GHz)
MGL047
1.25
5
handbook, halfpage
V
Fig.5
CC
(%)
C
= 50 V; t
50
45
40
MX0912B100Y; MZ0912B100Y
0.95
Collector efficiency as a function of
frequency. (In broadband test circuit as
shown in Fig.7)
p
= 10 s;
1.05
= 10%.
1.15
Product specification
f (GHz)
MGL048
1.25