MZ0912B100Y,114 NXP Semiconductors, MZ0912B100Y,114 Datasheet - Page 7

• Manufacturer Part Number: MZ0912B100Y,114
• Description: TRANSISTOR POWER NPN SOT439A
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B100Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 7.6dB
• Power - Max: 290W
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 933994050114; MZ0912B100Y TRAY; MZ0912B100Y TRAY

Philips Semiconductors
1997 Feb 20
handbook, full pagewidth
NPN microwave power transistors
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
40
18
0.635
30
12.5
2 3
L1
Fig.7 Broadband test circuit.
C3
10
3
4
5
7
10
MX0912B100Y; MZ0912B100Y
5
C2
16
3
C5
30
0.635
10
L2
V CC
C4
3 1
7
MGK067
C1
3
Product specification
40