MZ0912B100Y,114 NXP Semiconductors, MZ0912B100Y,114 Datasheet - Page 4

• Manufacturer Part Number: MZ0912B100Y,114
• Description: TRANSISTOR POWER NPN SOT439A
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B100Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 7.6dB
• Power - Max: 290W
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 933994050114; MZ0912B100Y TRAY; MZ0912B100Y TRAY

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. See “ Mounting recommendations in the General part of handbook SC19a” .
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
APPLICATION INFORMATION
Microwave performance up to T
in pulse mode; note 1.
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. V
1997 Feb 20
R
R
Z
I
I
I
Class C;
t
t
see Fig.6
SYMBOL
SYMBOL
mb
CBO
CES
EBO
p
p
th j h
th j-mb
th mb-h
NPN microwave power transistors
MODE OF OPERATION
= 10 s;
= 300 s;
= 25 C unless otherwise specified.
CC
during pulse.
thermal resistance from junction to mounting-base T
thermal resistance from mounting-base to heatsink T
thermal impedance from junction to heatsink
collector cut-off current
collector cut-off current
emitter cut-off current
= 10%
= 10%;
PARAMETER
PARAMETER
mb
0.960 to 1.215
1.03 to 1.09
= 25 C measured in the test jig as shown in Fig.7 and working in class C broadband
(GHz)
f
(V)
V
50
50
CC
(2)
4
typ. 125
typ. 115
V
V
V
V
t
T
(W)
p
P
100
j
j
j
CB
CB
CB
EB
= 10 s; = 10 %;
= 125 C
= 125 C; note 1
= 125 C; notes 1 and 2
L
CONDITIONS
MX0912B100Y; MZ0912B100Y
= 1.5 V; I
= 65 V; I
= 50 V; I
= 60 V; R
CONDITIONS
typ. 7.6
typ. 8
(dB)
E
E
C
G
BE
= 0
= 0
7
= 0
p
= 0
40
4
40
400
typ. 44
typ. 50
(%)
42
MAX.
C
Product specification
MAX.
see Figs 8 and 9
0.43
3.2
0.2
mA
mA
mA
A
Z
( )
i
UNIT
/Z
L
UNIT
K/W
K/W
K/W