MZ0912B100Y,114 NXP Semiconductors, MZ0912B100Y,114 Datasheet - Page 8

• Manufacturer Part Number: MZ0912B100Y,114
• Description: TRANSISTOR POWER NPN SOT439A
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B100Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 7.6dB
• Power - Max: 290W
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 933994050114; MZ0912B100Y TRAY; MZ0912B100Y TRAY

Philips Semiconductors
1997 Feb 20
handbook, full pagewidth
handbook, full pagewidth
NPN microwave power transistors
V
V
CC
CC
= 50 V; Z
= 50 V; Z
Fig.9 Optimum load impedance as a function of frequency associated with input impedance.
Fig.8 Input impedance as a function of frequency associated with optimum load impedance.
o
o
= 10 ; P
= 10 .; P
L
L
= 100 W.
= 100 W.
j
j
j
j
0
0
0.2
0.2
0.2
0.2
1.215 GHz
0.5
0.5
0.5
0.5
0.2
0.2
1.215 GHz
0.5
0.5
0.960 GHz
0.960 GHz
1
1
8
1
1
1
1
2
2
MX0912B100Y; MZ0912B100Y
5
5
2
2
2
2
10
10
MGL044
MGL045
5
5
5
5
10
10
10
10
Product specification