ALXD800EEXJ2VC C3 AMD (ADVANCED MICRO DEVICES), ALXD800EEXJ2VC C3 Datasheet - Page 606

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ALXD800EEXJ2VC C3

Manufacturer Part Number
ALXD800EEXJ2VC C3
Description
Manufacturer
AMD (ADVANCED MICRO DEVICES)
Datasheet

Specifications of ALXD800EEXJ2VC C3

Operating Temperature (min)
0C
Operating Temperature (max)
85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
Note 1. Refer to the Table 3-5 "Ball Assignments - Sorted by Ball Number" on page 26 for package signal names associated
Note 2. The SDA pad is designed to use a pull-up on-chip functionally, hence I
606
Symbol
I
C
OL
IO
with each buffer type.
Parameter
Output Low Current, Note 1
PCI
24/Q3
24/Q5
24/Q7
5V
DDR (BA[1:0], MA[13:0])
DDR (DQ[63:0], CKE[1:0],
CS[3:0]#, RAS[1:0]#, CAS[1:0]#,
WE[1:0]#, DQS[7:0], DQM[7:0],
TLA[1:0]
DDRCLK
Input and Output Capacitance, Note 1
PCI
24/Q3
24/Q5
24/Q7
5V
DDR
DDRCLK
33234H
Table 7-7. DC Characteristics (Continued)
1500
24.0
24.0
24.0
16.0
15.2
10.0
Min
11
Max
15.0
8.0
5.0
5.0
5.0
5.0
8.0
OH
is not used to drive high, I
AMD Geode™ LX Processors Data Book
Units
mA
mA
mA
mA
mA
mA
mA
µA
pF
pF
pF
pF
pF
pF
pF
Comments
I
V
drive set for pad
I
drive set for pad
OL
OL
O
= V
min = 11 mA with half-
min = 8 mA with quarter-
Electrical Specifications
OL
(Max)
LEAK
is instead

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