BLW96 NXP Semiconductors, BLW96 Datasheet - Page 12

• Manufacturer Part Number: BLW96
• Description: NPN silicon planar epitaxial transistor intended for use in class-A,AB and B operated high power industrial and military transmitting equipment in the HF and VHF band
• Manufacturer: NXP Semiconductors

Specifications of BLW96

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 55V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 12A
• Dc Current Gain (min): 15
• Power Dissipation: 340W
• Frequency (max): 245MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
August 1986
handbook, full pagewidth
HF/VHF power transistor
Fig.19 Third order intermodulation distortion as a function of output power.
(dB)
d 3
30
40
50
60
0
T
h
= 25 C; f
1
= 28,000 MHz; f
20
2
= 28,001 MHz.
I C = 3 A
40
12
4 A
60
5 A
(1)
Typical values; V
80
P.E.P. (W)
Product specification
CE
= 40 V;
MGP702
BLW96
100