BLW96 NXP Semiconductors, BLW96 Datasheet - Page 6

• Manufacturer Part Number: BLW96
• Description: NPN silicon planar epitaxial transistor intended for use in class-A,AB and B operated high power industrial and military transmitting equipment in the HF and VHF band
• Manufacturer: NXP Semiconductors

Specifications of BLW96

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 55V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 12A
• Dc Current Gain (min): 15
• Power Dissipation: 340W
• Frequency (max): 245MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
APPLICATION INFORMATION
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
V
List of components:
Notes
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
2. ATC means American Technical Ceramics.
August 1986
handbook, full pagewidth
C1 = C4 = C10 = C14 = 100 pF film dielectric trimmer
C2 = 27 pF ceramic capacitor (500 V)
C3 = 270 pF polysterene capacitor (630 V)
C5 = C7 = C8 = 220 nF multilayer ceramic chip capacitor
C6 = 27 pF multilayer ceramic chip capacitor (500 V; ATC
C9 = 47 F/63 V electrolytic capacitor
C11 = 2
C12 = 2
C13 = 43 pF multilayer ceramic chip capacitor (500 V; ATC
L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9,0 mm; length 6,1 mm; leads 2
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 150 nH; 5 turns Cu wire (2,0 mm); int. dia. 10,0 mm; length 18,7 mm; leads 2
L4 = 197 nH; 5 turns Cu wire (2,0 mm); int. dia. 12,0 mm; length 18,6 mm; leads 2
R1 = 0,66 ; parallel connection of 5
R2 = 27
CE
HF/VHF power transistor
Relative to the according peak envelope powers these figures should be increased by 6 dB.
= 50 V; T
OUTPUT POWER
50
25 to 200 (P.E.P.)
36 pF multilayer ceramic chip capacitors (500 V; ATC
43 pF multilayer ceramic chip capacitors (500 V; ATC
carbon resistor ( 5%; 0,5 W)
W
h
= 25 C; f
C2
C1
1
compensated bias
= 28,000 MHz; f
C3
temperature
(R i
dB
G
13,5
C4
p
0.1 )
L1
3,3
R1
2
Fig.8 Test circuit; s.s.b. class-AB.
= 28,001 MHz
L2
dt
metal film resistors (PR37;
at 200 W (P.E.P.)
40
(%)
C5
R2
(2)
T.U.T.
6
(2)
)
I
C
)
5,0
(A)
(2)
(2)
C9
C7
C8
) in parallel
) in parallel
C6
L4
L3
5%; 1,6 W each)
d
dB
C10
C11
3
C12
(1)
30
V CC
5 mm
5 mm
5 mm
C13
MGP691
d
C14
dB
5
(1)
30
Product specification
50
BLW96
I
C(ZS)
0,1
A