BLW96 NXP Semiconductors, BLW96 Datasheet - Page 9

• Manufacturer Part Number: BLW96
• Description: NPN silicon planar epitaxial transistor intended for use in class-A,AB and B operated high power industrial and military transmitting equipment in the HF and VHF band
• Manufacturer: NXP Semiconductors

Specifications of BLW96

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 55V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 12A
• Dc Current Gain (min): 15
• Power Dissipation: 340W
• Frequency (max): 245MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
T
August 1986
handbook, halfpage
h
HF/VHF power transistor
= 25 C
f (MHz)
(W)
P L
400
300
200
100
108
Fig.13 V
0
0
CE
= 50 V; f = 108 MHz; T
V
25
CE
50
(V)
typ
50
P
P S (W)
L
200
h
(W)
= 25 C.
MGP696
75
P
typ. 45
S
9
(W)
handbook, halfpage
Fig.14 V
(dB)
G p
7.5
2.5
10
5
0
0
typical values.
G
typ. 6,5
CE
p
(dB)
= 50 V; f = 108 MHz; T
G p
100
I
typ. 6
C
(A)
200
Product specification
h
P L (W)
= 25 C;
MGP697
BLW96
typ. 67
300
(%)
100
75
50
25
0
(%)