BLW96 NXP Semiconductors, BLW96 Datasheet - Page 8

• Manufacturer Part Number: BLW96
• Description: NPN silicon planar epitaxial transistor intended for use in class-A,AB and B operated high power industrial and military transmitting equipment in the HF and VHF band
• Manufacturer: NXP Semiconductors

Specifications of BLW96

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 55V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 12A
• Dc Current Gain (min): 15
• Power Dissipation: 340W
• Frequency (max): 245MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
Figs 11 and 12 are typical curves and hold for one
transistor of a push-pull amplifier with cross-neutralization
in s.s.b. class-AB operation.
August 1986
handbook, halfpage
HF/VHF power transistor
V
T
h
CE
(dB)
= 25 C; Z
Fig.11 Power gain as a function of frequency.
G p
= 50 V; I
30
20
10
0
1
C(ZS)
L
= 5 ; neutralizing capacitor: 47 pF
= 0,1 A; P
L
= 200 W (P.E.P.);
10
f (MHz)
MGP694
10
2
8
andbook, halfpage
r i , x i
V
T
Fig.12 Input impedance (series components) as a
( )
CE
h
= 25 C; Z
4
3
2
1
0
= 50 V; I
1
function of frequency.
C(ZS)
L
= 5 ; neutralizing capacitor: 47 pF
x i
r i
= 0,1 A; P
L
= 200 W (P.E.P.);
10
f (MHz)
x i
r i
Product specification
MGP695
BLW96
10
2