BLW96 NXP Semiconductors, BLW96 Datasheet - Page 3

• Manufacturer Part Number: BLW96
• Description: NPN silicon planar epitaxial transistor intended for use in class-A,AB and B operated high power industrial and military transmitting equipment in the HF and VHF band
• Manufacturer: NXP Semiconductors

Specifications of BLW96

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 55V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 12A
• Dc Current Gain (min): 15
• Power Dissipation: 340W
• Frequency (max): 245MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
(dissipation = 150 W; T
August 1986
Collector-emitter voltage (V
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
R.F. power dissipation (f
Storage temperature
Operating junction temperature
handbook, halfpage
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
HF/VHF power transistor
peak value
(A)
I C
10
10
1
2
10
T h = 70 C
Fig.2 D.C. SOAR.
mb
= 100 C, i.e. T
1 MHz); T
BE
= 0)
1 MHz
T mb = 45 C
mb
V CE (V)
= 45 C
h
= 70 C)
MGP685
10
2
3
handbook, halfpage
I Continuous d.c. operation
II Continuous r.f. operation; f
III Short-time operation during mismatch; f
P tot
(W)
400
300
200
100
Fig.3 Power/temperature derating curves.
0
0
R
R
R
th j-mb(dc)
th j-mb(rf)
th mb-h
V
V
V
I
I
P
T
T
C(AV)
CM
stg
j
CESM
CEO
EBO
rf
derate by
50
1.58 W/K
1.35 W/K
1 MHz
=
=
=
100
max.
max.
max.
max.
max.
max.
max.
Product specification
65 to
1 MHz
T h ( C)
MGP686
0,63 K/W
0,45 K/W
BLW96
340 W
150
200
110 V
0,2 K/W
55 V
12 A
40 A
4 V
150
C
C