BLW96 NXP Semiconductors, BLW96 Datasheet - Page 13

• Manufacturer Part Number: BLW96
• Description: NPN silicon planar epitaxial transistor intended for use in class-A,AB and B operated high power industrial and military transmitting equipment in the HF and VHF band
• Manufacturer: NXP Semiconductors

Specifications of BLW96

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 55V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 12A
• Dc Current Gain (min): 15
• Power Dissipation: 340W
• Frequency (max): 245MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
PACKAGE OUTLINE
August 1986
Flanged ceramic package; 2 mounting holes; 4 leads
HF/VHF power transistor
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT121B
0.286
0.243
7.27
6.17
A
0.229
0.219
5.82
5.56
b
0.006
0.004
0.16
0.10
c
A
H
IEC
12.86
12.59
0.506
0.496
H
D
4
1
12.83
12.57
0.505
0.495
D 1
0.105
0.095
2.67
2.41
JEDEC
F
28.45
25.52
1.120
1.005
U 1
D
REFERENCES
q
H
L
0.312
0.249
7.93
6.32
L
0.130
0.120
3.30
3.05
EIAJ
13
p
3
2
C
0.175
0.154
4.45
3.91
b
Q
B
p
F
18.42
0.725
q
U 2
A
w 2
w 1
24.90
24.63
M
M
0.98
0.97
U 1
A B
C
0.255
0.245
6.48
6.22
0
U 2
PROJECTION
EUROPEAN
12.32
12.06
0.485
0.475
D 1
scale
U 3
5
U 3
0.51
0.02
w 1
10 mm
Product specification
c
Q
1.02
0.04
w 2
ISSUE DATE
97-06-28
BLW96
45
SOT121B