40MT120UHAPBF Vishay Semiconductors, 40MT120UHAPBF Datasheet

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40MT120UHAPBF

Manufacturer Part Number
40MT120UHAPBF
Description
Manufacturer
Vishay Semiconductors
Datasheet

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Part Number:
40MT120UHAPBF
Quantity:
70 000
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94507
Revision: 01-Mar-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter breakdown voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation (only IGBT)
V
CE(on)
I
C
typical at V
at T
V
C
CES
= 25 °C
"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A
GE
= 15 V
MTP
For technical questions, contact:
1200 V
3.36 V
SYMBOL
80 A
V
V
V
I
I
I
P
ISOL
CES
CM
I
LM
I
FM
GE
C
F
D
T
T
T
Any terminal to case, t = 1 min
T
T
40MT120UHAPbF, 40MT120UHTAPbF
C
C
C
C
C
= 25 °C
= 104 °C
= 105 °C
= 25 °C
= 100 °C
TEST CONDITIONS
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive V
• 10 μs short circuit capability
• Square RBSOA
• HEXFRED
• Al
• Optional SMD thermistor (NTC)
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Benchmark efficiency above 20 kHz
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
indmodules@vishay.com
recovery and low V
2
O
3
DBC
CE(on)
®
Vishay High Power Products
antiparallel diodes with ultrasoft reverse
temperature coefficient
F
MAX.
1200
2500
± 20
160
160
160
463
185
80
40
21
www.vishay.com
UNITS
W
A
V
V
1

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40MT120UHAPBF Summary of contents

Page 1

... RMS isolation voltage Maximum power dissipation (only IGBT containing terminations are not RoHS compliant, exemptions may apply Document Number: 94507 Revision: 01-Mar-10 40MT120UHAPbF, 40MT120UHTAPbF FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive V • 10 μs short circuit capability • Square RBSOA • ...

Page 2

... Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage Collector to emitter saturation voltage Gate threshold voltage Temperature coefficient of threshold voltage Transconductance Zero gate voltage collector current Gate to emitter leakage current SWITCHING CHARACTERISTICS (T PARAMETER ...

Page 3

... Storage temperature range IGBT Junction to case Diode Case to sink per module (1) Clearance (2) Creepage Mounting torque to heatsink Weight Document Number: 94507 Revision: 01-Mar-10 40MT120UHAPbF, 40MT120UHTAPbF "Half Bridge" IGBT MTP (Ultrafast NPT IGBT °C unless otherwise specified) SYMBOL TEST CONDITIONS ...

Page 4

... Vishay High Power Products 100 100 120 140 160 T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 600 500 400 300 200 100 100 120 140 160 T C (°C) Fig Power Dissipation vs. Case Temperature ...

Page 5

... V GE (V) Fig Typical V vs °C J Document Number: 94507 Revision: 01-Mar-10 40MT120UHAPbF, 40MT120UHTAPbF "Half Bridge" IGBT MTP (Ultrafast NPT IGBT 4.0 5 80A 40A 20A 20 GE For technical questions, contact: indmodules@vishay.com Vishay High Power Products ...

Page 6

... Vishay High Power Products 4800 4200 3600 3000 2400 1800 E ON 1200 600 E OFF (A) Fig Typical Energy Loss vs 125 ° 250 μ Ω 1000 100 (A) Fig ...

Page 7

... THERMAL RESPONSE ) ( THERMAL RESPONSE) 1E-005 1E-005 1E-006 1E-006 1E-005 1E-005 Fig Maximum Transient Thermal Impedance, Junction to Case (IGBT) Document Number: 94507 Revision: 01-Mar-10 40MT120UHAPbF, 40MT120UHTAPbF "Half Bridge" IGBT MTP (Ultrafast NPT IGBT 800 1000 vs 125 °C J 60A 40A 20A 5.0 Ω ...

Page 8

... Vishay High Power Products 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE) 0.001 1E-006 Fig Maximum Transient Thermal Impedance, Junction to Case (Diode) www.vishay.com 8 "Half Bridge" IGBT MTP (Ultrafast NPT IGBT τ J τ J τ 1 τ 1 Ci= τi/Ri Ci 1E-005 0.0001 Rectangular Pulse Duration (sec) ...

Page 9

... D.U. Fig. CT.1 - Gate Charge Circuit (Turn-Off D.U. Fig. CT.2 - RBSOA Circuit Document Number: 94507 Revision: 01-Mar-10 40MT120UHAPbF, 40MT120UHTAPbF "Half Bridge" IGBT MTP (Ultrafast NPT IGBT Diode clamp/ 1000 V For technical questions, contact: indmodules@vishay.com Vishay High Power Products Driver ...

Page 10

... Vishay High Power Products ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION Dimensions www.vishay.com 10 "Half Bridge" IGBT MTP (Ultrafast NPT IGBT 120 Current rating ( Essential part number - Voltage code (120 = 1200 V) ...

Page 11

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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